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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

Brand Name : Hamamatsu

Model Number : S1227-33BR

Place of Origin : Japan

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 3000PCS/Months

Delivery Time : 3-5Workingdays

Packaging Details : Standard Package

Photosensitive area : 2.4 × 2.4 mm

Package : Ceramic

Cooling : Non-cooled

Reverse voltage (max.) : 5 V

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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

Features:
High uV sensitivity (quartz window type): QE 75 % (λ=200 nm)
Suppressed IR sensitivity
Low dark current

Applications:
Analytical equipment
Optical measurement equipment, etc.

Specification:

Spectral response range
340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 5 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 160 pF
Noise equivalent power (typ.) 2.1×10-15 W/Hz1/2

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon


Product Tags:

UV photodiode sensor for precision photometry

      

silicon photodiode sensor UV to visible

      

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Wholesale S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon from china suppliers

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon Images

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